Rotation detecting device and correction method therefor

ABSTRACT

A rotation detecting device includes first and second magnetic detection elements that output first and second signals and a detection circuit having the first and second signals input thereto. The detection circuit includes an automatic correction circuit that performs generating and updating of a correction value for correcting the and second signals. The automatic correction circuit is configured to stop the generating or the updating of the correction value in at least one of a case where a rotation direction of an object is changed to a reverse rotation direction from a normal rotation direction and a case where a rotation direction of the object is changed to the normal rotation direction from the reverse rotation direction.

This application is a U.S. national stage application of the PCT international application No. PCT/JP2017/009914 filed on Mar. 13, 2017, which claims the benefit of foreign priority of Japanese patent applications No. 2016-056459 filed on Mar. 22, 2016, No. 2016-057969 filed on Mar. 23, 2016, No. 2016-057970 filed on Mar. 23, 2016, No. 2016-057971 filed on Mar. 23, 2016, No. 2016-093006 filed on May 6, 2016, and No. 2016-093005 filed on May 6, 2016, the contents all of which are incorporated herein by reference.

TECHNICAL FIELD

The present invention relates to a rotation detecting device used for detecting, e.g. a steering angle of an automobile.

BACKGROUND ART

A magnetic sensor for detecting a steering angle even while an ignition switch of an automobile is turned off is known. PTLs 1 to 3 are known as prior art documents related to such a magnetic sensor.

A magnetic sensor for detecting rotation of an object which includes a steering angle or the like using a magneto-resistive element is known. PTLs 4 to 6 are known as prior art documents related to such a magnetic sensor.

A magnetic sensor which has magnetic field generating means for diagnosing a sensor based on a magnetic field generated from the magnetic field generating means is known. PTLs 7 and 8 are known as prior art documents related to such a magnetic sensor.

A magnetic sensor combining a magneto-resistive element and a Hall element is known. PTLs 9 and 10 are known as prior art documents related to such a magnetic sensor.

In recent years, demands for high accuracy and reliability in the magnetic sensor have been increased. However, it is difficult for the above-mentioned magnetic sensors to satisfy these demands sufficiently.

CITATION LIST Patent Literature

PTL 1: Japanese Patent Laid-Open Publication No. 2015-116964

PTL 2: International Publication WO 2014/148087

PTL 3: Japanese Patent Laid-Open Publication No. 2002-213944

PTL 4: Japanese Patent Laid-Open Publication No. 2014-209124

PTL 5: Japanese Patent No. 5708986

PTL 6: Japanese Patent Laid-Open Publication No. 2007-155668

PTL 7: Japanese Patent No. 5620989

PTL 8: Japanese Patent Laid-Open Publication No. 06-310776

PTL 9: Japanese Patent No. 4138952

PTL 10: Japanese Patent No. 5083281

SUMMARY

A rotation detecting device includes first and second magnetic detection elements that output first and second signals and a detection circuit having the first and second signals input thereto. The detection circuit includes an automatic correction circuit that performs generating and updating of a correction value for correcting the and second signals. The automatic correction circuit is configured to stop the generating or the updating of the correction value in at least one of a case where a rotation direction of an object is changed to a reverse rotation direction from a normal rotation direction and a case where a rotation direction of the object is changed to the normal rotation direction from the reverse rotation direction.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1A is a block diagram of a magnetic sensor in accordance with an exemplary embodiment.

FIG. 1B is a circuit diagram of a magnetic detection element of the magnetic sensor in accordance with the embodiment.

FIG. 2A is a schematic view of a rotation detecting device including the magnetic sensor in accordance with the embodiment.

FIG. 2B is a schematic view of a control system including the rotation detecting device in accordance with the embodiment.

FIG. 3 illustrates an operation of a detection circuit of the magnetic sensor in accordance with the embodiment.

FIG. 4 illustrates another operation of the detection circuit of the magnetic sensor in accordance with the embodiment.

FIG. 5 illustrates still another operation of the detection circuit of the magnetic sensor in accordance with the embodiment.

FIG. 6 illustrates an operation of the magnetic sensor in accordance with the embodiment.

FIG. 7A is a flowchart for explaining a further operation of the detection circuit of the magnetic sensor in accordance with the embodiment.

FIG. 7B schematically illustrates an operation of correcting the detection circuit of the magnetic sensor in accordance with the embodiment.

FIG. 7C is a schematic diagram of the detection circuit of the magnetic sensor in accordance with the embodiment for explaining an operation of correcting of the detection circuit.

FIG. 8 is a block diagram of another magnetic sensor in accordance with the embodiment.

FIG. 9 is a top view of the magneto-resistive element and the detection circuit shown in FIG. 8.

FIG. 10 is a front view of the magnetic sensor shown in FIG. 8.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

FIG. 1A is a block diagram of magnetic sensor 100 in accordance with an exemplary embodiment. Magnetic sensor 100 includes magneto-resistive (MR) element 12 and detection circuit 10 that is electrically connected to magneto-resistive element 12.

FIG. 1B is a circuit diagram of magneto-resistive element 12. Magneto-resistive element 12 includes eight magneto-resistive elements 12 a to 12 h. Each magneto-resistive element is a magneto-resistive effect element that is provided on substrate 12 p, such as a silicon substrate, and contains iron-nickel alloy. Each magneto-resistive element has an electrical resistance that changes according to a change in direction and magnitude of a magnetic field applied to the magneto-resistive element from the outside. In other words, magneto-resistive element 12 (12 a to 12 h) is a magnetic detection element for detecting magnetism.

Magneto-resistive elements 12 a to 12 d constitute bridge circuit WB1. In other words, a series circuit assembly constituted by magneto-resistive elements 12 a and 12 b connected in series with each other is connected in parallel with a series circuit assembly constituted by magneto-resistive elements 12 c and 12 d connected in series with each other to form bridge circuit WB1. One end of bridge circuit WB1 is connected to potential VS, and the other end of bridge circuit WB1 is grounded through ground GND.

As shown in FIG. 1B, end 12 a-2 of magneto-resistive element 12 a is connected to end 12 b-1 of magneto-resistive element 12 b at node 12 ab, and magneto-resistive elements 12 a and 12 b are thus connected in series with each other. End 12 c-2 of magneto-resistive element 12 c is connected to end 12 d-1 of magneto-resistive element 12 d at node 12 cd, and magneto-resistive elements 12 c and 12 d are thus connected in series with each other. End 12 a-1 of magneto-resistive element 12 a is connected to end 12 c-1 of magneto-resistive element 12 c at node 12 ac, and magneto-resistive elements 12 a and 12 c are thus connected in series with each other. End 12 b-2 of magneto-resistive element 12 b is connected to end 12 d-2 of magneto-resistive element 12 d at node 12 bd, and magneto-resistive elements 12 b and 12 d are thus connected in series with each other. Node 12 ab is connected to potential VS which is a fixed potential, and node 12 cd is grounded through ground GND, i.e., connected to a fixed potential. Nodes 12 ac and 12 bd constitute midpoints of bridge circuit WB1.

Magneto-resistive elements 12 e to 12 h constitute bridge circuit WB2. In other words, a series circuit assembly constituted by magneto-resistive elements 12 e and 12 f connected in series with each other is connected in parallel with a series circuit assembly constituted by magneto-resistive elements 12 g and 12 h connected in series with each other to form bridge circuit WB2. One end of bridge circuit WB2 is connected to potential VC serving as a reference potential, and the other end of bridge circuit WB2 is grounded through ground GND.

As shown in FIG. 1B, end 12 e-2 of magneto-resistive element 12 e is connected to end 12 f-1 of magneto-resistive element 12 f at node 12 ef, and magneto-resistive elements 12 e and 12 f are connected in series with each other. End 12 g-2 of magneto-resistive element 12 g is connected to end 12 h-1 of magneto-resistive element 12 h at node 12 gh, and magneto-resistive elements 12 g and 12 h are connected in series with each other. End 12 e-1 of magneto-resistive element 12 e is connected to end 12 g-1 of magneto-resistive element 12 g at node 12 eg, and magneto-resistive elements 12 e and 12 g are connected in series with each other. End 12 f-2 of magneto-resistive element 12 f is connected to end 12 h-2 of magneto-resistive element 12 h at node 12 fh, and magneto-resistive elements 12 f and 12 h are connected in series with each other. Node 12 ef is connected to potential VC which is a fixed reference potential, and node 12 gh is grounded through ground GND, i.e., connected to a fixed potential. Nodes 12 eg and 12 fh constitute midpoints of bridge circuit WB2.

The bridge circuit WB1 coincides with bridge circuit WB2 rotated by 45°. In another expression, bridge circuit WB2 coincides with bridge circuit WB1 rotated by 45°.

Magnetic sensor 100 is disposed near object magnet 142. Object magnet 142 is coupled with a rotating member (e.g., a steering shaft of an automobile), which serves as a target, via, e.g. a gear. According to a change in external magnetic field (or rotating magnetic field) applied from object magnet 142, the resistances of magneto-resistive elements 12 a to 12 h change. Accordingly, signal sin+ and signal sin− are output from node 12 ac of magneto-resistive elements 12 a and 12 c and node 12 bd of magneto-resistive elements 12 b and 12 d, respectively. Signal sin+ and signal sin− are sine wave signals having sinusoidal wave form with phases different from each other by 180°. Magneto-resistive elements 12 a to 12 d constitute bridge circuit WB1. Signal cos− and signal cos+ are output from node 12 eg of magneto-resistive elements 12 e and 12 g and node 12 fh of magneto-resistive elements 12 f and 12 h, respectively. Signal cos− and signal cos+ are cosine wave signals with phases different from each other by 180°. Magneto-resistive elements 12 e to 12 h constitute bridge circuit WB2. Signal cos+ and signal cos− have phases delayed by 90° from signal sin+ and signal sin−, respectively. Signal cos+ and signal cos− are cosine wave signals output from bridge circuit WB2. Signal sin+ and signal sin− are sine wave signals output from bridge circuit WB1. Sine wave signals are obtained from bridge circuit WB1 while cosine wave signals are obtained from bridge circuit WB2. This is because bridge circuit WB1 coincides with bridge circuit WB2 rotated by 45°. Thus, magneto-resistive element 12 outputs detection signals (signal sin+, signal sin−, signal cos+, signal cos−) according to the rotation of object magnet 142.

Detection circuit 10 is mounted on substrate 10 p, and performs various kinds of signal processing, such as amplification and analog-to-digital (AD) conversion of signal sin+, signal sin−, signal cos+, and signal cos−, while receiving signal sin+, signal sin−, signal cos+, and signal cos−.

A structure and operation of detection circuit 10 will be detailed below.

Amplifier 14 a amplifies signal sin+. Amplifier 14 b amplifies signal sin−. Amplifier 14 c amplifies signal cos+. Amplifier 14 d amplifies signal cos−.

Offset control circuit 15 is connected to input stages of amplifiers 14 a to 14 d, and controls amplifiers 14 a to 14 d such that a difference between midpoint potentials which are respective average values of signal sin+ and signal sin− is adjusted to be zero, and a difference between midpoint potentials which are respective average values of signal cos+ and signal cos− is adjusted to be zero.

Differential amplifier 16 a amplifies a difference between signal sin+ and signal sin− which are output from bridge circuit WB1 so as to generate signal sin having twice each of respective amplitudes of signal sin+ and signal sin−.

Differential amplifier 16 b amplifies a difference between signal cos+ and signal cos− which are output from bridge circuit WB2 so as to generate signal cos having twice each of respective amplitudes of signal cos+ and signal cos−. Signal cos is a sine wave signal with phase different from the phase of signal sin by 90°.

Gain control circuit 17 adjusts gains of differential amplifiers 16 a and 16 b such that signal sin and signal cos which are output from differential amplifiers 16 a and 16 b have predetermined amplitudes.

This configuration does not require the adjusting of offset and gain of each of amplifiers 14 a to 14 d, so that the signals are adjustable by one offset adjustment and one gain adjustment. This contributes particularly to reduce circuit size.

An analog signal output from differential amplifier 16 a is sampled by AD converter 18 a at a predetermined sampling period and converted into signal sin which is a digital signal.

An analog signal output from differential amplifier 16 b is sampled by AD converter 18 b at a predetermined sampling period and converted into signal cos which is a digital signal. Amplifiers 14 a to 14 d, differential amplifiers 16 a and 16 b, and AD converters 18 a and 18 b constitute processing circuit 10 m that processes the signals output from magneto-resistive element 12 (12 a to 12 h) and outputs signal sin and signal cos which are digital signals.

Hall element 40 a has a detection sensitivity to a magnetic field perpendicular or parallel to the circuit substrate on which detection circuit 10 is provided, and outputs a detection signal according to a direction and magnitude of an external magnetic field (rotating magnetic field) mentioned above.

Hall element 40 b has a detection sensitivity to a magnetic field perpendicular or parallel to the circuit substrate on which detection circuit 10 is provided, and outputs a detection signal according to a direction and magnitude of an external magnetic field (rotating magnetic field) mentioned above.

Amplifier 42 a amplifies signal S40 a output from Hall element 40 a.

Amplifier 42 b amplifies signal S40 b output from Hall element 40 b.

Comparator 44 a converts a signal output from amplifier 42 a into pulse signal S44 a with a rectangle wave shape by binarizing, i.e., comparing the signal with predetermined threshold S0 to generate a binary signal. Threshold S0 is a median value of signals output from amplifier 42 a.

Comparator 44 b converts a signal output from amplifier 42 b into pulse signal S44 b with a rectangle wave shape by binarizing the signal, i.e., by comparing the signal with predetermined threshold S0 to generate a binary signal. Threshold S0 is a median value of signals output from amplifier 42 b. Amplifiers 42 a and 42 b, and comparators 44 a and 44 b constitute processing circuit 10 n that processes signals output from Hall elements 40 a and 40 b and outputs pulse signal S44 a and S44 b.

Hall element 40 a has a structure coinciding with a configuration of Hall element 40 b rotated by 90°. In another expression, Hall element 40 b has a structure identical to a configuration Hall element 40 a rotated at 90°. The pulse signal output from Hall element 40 via comparator 44 a has a phase difference of 90° with respect to the pulse signal output from Hall element 40 b via comparator 44 b.

Regulator 60 b supplies potential V1 to processing circuit 10 n, oscillator (OSC) 80 a, and Hall elements 40 a and 40 b.

Regulator 60 c supplies potential V2 to oscillator (OSC) 80 b. Potential V2 is used in Hall elements 40 a and 40 b in an intermittent operation mode.

Regulator 60 a supplies potentials VS, VC, and V3 to magneto-resistive element 12 and processing circuit 10 m.

Processing unit 70 includes angle detection circuit 70 a, rotation number detection circuit 70 b, offset-temperature-characteristic correction circuit 70 c, and gain-temperature-characteristic correction circuit 70 d. Offset-temperature-characteristic correction circuit 70 c and gain-temperature-characteristic correction circuit 70 d constitute temperature-characteristic correction circuit 70 p.

Angle detection circuit 70 a detects a rotation angle of object magnet 142 from signal sin serving as a digital signal, signal cos serving as a digital signal, and pulse signals S44 a and S44 b, and outputs signal Vout. Specifically, an arc-tangent calculation is performed on signal sin and signal cos, i.e., a value of signal cos is divided by a value of signal sin to detect the rotation angle. Angle detection circuit 70 a outputs an angle signal indicating the detected rotation angle.

Rotation number detection circuit 70 b detects the number of rotations of object magnet 142 based on pulse signals S44 a and S44 b by the method described below, and outputs rotation-number information indicating the number of rotations detected above.

Offset-temperature-characteristic correction circuit 70 c corrects, by, the method described later, a direct-current (DC) offset which occurs in signal sin or signal cos due to, e.g. a variation in resistance of magneto-resistive element 12.

Gain-temperature-characteristic correction circuit 70 d corrects, by the method described later, an offset of amplitude which occurs in signal sin or signal cos due to a change in temperature of magneto-resistive element 12. In other words, a change in amplitude of signal sin or signal cos with respect to a temperature is previously measured to obtain a measured value. The measured value is stored in memory 80 c of detection circuit 10. Based on temperature information corresponding to the temperature obtained from temperature sensor 80 d, the measured value stored in memory 80 c is read out. The measured value read out from memory 80 c is added to the amplitude of signal sin or signal cos. Thus, the offset of amplitude which occurs in signal sin or signal cos is corrected based on the temperature.

Oscillator 80 a generates internal clock S80 a to be used in detection circuit 10. Internal clock S80 a generated by oscillator 80 a is used for detection in magneto-resistive element 12 and Hall elements 40 a and 40 b.

Oscillator 80 b generates internal clock S80 b to be used in detection circuit 10.

The frequency of internal clock S80 b generated in oscillator 80 b is lower than the frequency of internal clock S80 a generated in oscillator 80 a.

Memory 80 c stores rotation-number information indicating the number of rotations measured by rotation number detection circuit 70 b, and stores the measured value used for correcting the offset due to a change in temperature.

FIG. 2A is a schematic view of rotation detecting device 150 including magnetic sensor 100. Rotation detecting device 150 includes magnetic sensor 100, object magnet 142, rotation shaft 144 to which object magnet 142 is attached, bearing 146 for supporting rotation shaft 144, and motor 158 for rotating rotation shaft 144. Object magnet 142 is made of magnetic material.

FIG. 2B is a schematic view of control system 500 including rotation detecting device 150. Control system 500 is mounted on automobile 500 a. Control system 500 includes steering wheel 152, steering shaft 154, torque sensor 156, motor 158, magnetic sensor 100, and electrical control unit (ECU) 160. ECU 160 is connected to switch 160 a. Switch 160 a is an ignition switch. When automobile 500 a moves, the ignition switch is turned on. When automobile 500 a does not move, the ignition switch is turned off. When a driver rotates steering wheel 152 to change a driving direction of automobile 500 a, steering shaft 154 coupled to steering wheel 152 rotates in the same direction as the direction in which steering wheel 152 rotates. Torque sensor 156 detects a relative rotational displacement between an input shaft and an output shaft which is caused by the rotation of steering wheel 152, and transmits an electric signal according to the rotational displacement to ECU 160. Motor 158 assisting steering wheel 152 and steering shaft 154 helps a driver to change a direction of automobile 500 a with a light force. Magnetic sensor 100 attached to motor 158 detects a rotation angle of motor 158, thereby controlling motor 158.

As mentioned above, magnetic sensor 100 of rotation detecting device 150 includes: bridge circuit WB1 including magneto-resistive elements 12 a to 12 d, amplifier 14 a connected to a midpoint (node 12 ac) of bridge circuit WB1, amplifier 14 b connected to a midpoint (node 12 bd) of bridge circuit WB1, differential amplifier 16 a connected to amplifiers 14 a and 14 b, offset control circuit 15 connected to amplifiers 14 a and 14 b, and gain control circuit 17 connected to differential amplifier 16 a.

Analog-to-digital converter 18 a may be connected to amplifiers 14 a and 14 b.

Magnetic sensor 100 of rotation detecting device 150 includes bridge circuit WB1 including magneto-resistive elements 12 a to 12 d, bridge circuit WB2 including magneto-resistive elements 12 e to 12 h, amplifier 14 a connected to a midpoint (node 12 ac) of bridge circuit WB1, amplifier 14 b connected to a midpoint (node 12 bd) of bridge circuit WB1, amplifier 14 d connected to a midpoint (node 12 eg) of bridge circuit WB2, amplifier 14 c connected to a midpoint (node 12 fh) of bridge circuit WB2, differential amplifier 16 a connected to amplifiers 14 a and 14 b, differential amplifier 16 b connected to amplifiers 14 d and 14 c, offset control circuit 15 connected to amplifiers 14 a to 14 d, and gain control circuit 17 connected to differential amplifiers 16 a and 16 b.

Analog-to-digital (AD) converter 18 a may be connected to amplifiers 14 a and 14 b via differential amplifier 16 a. AD converter 18 b may be connected to amplifier 14 c and amplifier 14 d via differential amplifier 16 b.

In rotation detecting device 150 including bridge circuit WB1 including magneto-resistive element 12, offset of an output of bridge circuit WB1 is corrected. By amplifying the above-mentioned output with the corrected offset, the amplitude thereof is corrected.

In the correction mentioned above, the output with the corrected amplitude may be converted into a digital signal.

FIG. 3 is a flowchart showing an operation of magnetic sensor 100 in accordance with the embodiment. FIG. 3 shows an operation of magnetic sensor 100 detecting motion of a steering while switch 160 a serving as an ignition switch is turned on.

First, after magnetic sensor 100 is activated (S300), if switch 160 a is turned on (“YES” in S301), magnetic sensor 100 detects a rotation angle. When switch 160 a is turned on (“YES” in S301), magnetic sensor 100 detects the rotation angle based on a signal output from magneto-resistive element 12 (S302). In magnetic sensor 100, one rotation of 360° is divided into four quadrants at equal angular intervals of 90° to determine the rotation angle. Based on the signals output from Hall elements 40 a and 40 b, magnetic sensor 100 determines one quadrant out of the four quadrants which includes a rotation angle detected in Step S302, and detects the number of rotations based on the signals output from Hall elements 40 a and 40 b (S303). Magnetic sensor 100 transmits the rotation angle and the number of rotations obtained in the above calculation (S302, S303) to the outside.

FIG. 4 is a flowchart of another operation of magnetic sensor 100 in accordance with the embodiment, and illustrates an operation of magnetic sensor 100 detecting motion of a steering while switch 160 a is turned off.

First, at time point tp1 when switch 160 a is turned off, control system 500 inputs a control command signal to magnetic sensor 100 (S401). When the control command signal is input, magnetic sensor 100 is shifted to the intermittent operation mode (S402). When magnetic sensor 100 is shifted to the intermittent operation mode in Step 5402, processing unit 70 detects rotation-number information (absolute-angle information) indicating the number of rotations serving as the latest absolute angle before magnetic sensor 100 is shifted to the intermittent operation mode, and then stores rotation-number information (S403). When the absolute-angle information is stored in Step S403, processing unit 70 stops supplying electric power to magneto-resistive element 12 and processing circuit 10 m so as to deactivate magneto-resistive element 12 and processing circuit 10 m (S404). After that, processing unit 70 detects only the number of rotations of object magnet 142 based on the signals output from Hall elements 40 a and 40 b (S405). Processing unit 70 stores, in memory 80 c, rotation-number information indicating the number of rotations detected in Step S405 (S406). Subsequently, if switch 160 a is turned off (“NO” in S407), processing unit 70 detects only the number of rotations of object magnet 142 in Steps S405 and S406 based on the signals output from Hall elements 40 a and 40 b, and then, stores the detected number of rotations of object magnet 142 in memory 80 c. In this way, when switch 160 a is turned off (“NO” in S407), processing unit 70 detects only the number of rotations of object magnet 142 based on the signals output from Hall elements 40 a and 40 b every predetermined time in Steps S405 and S406, and then stores the number of rotations of object magnet 142 in memory 80 c. After time point tp1, if switch 160 a is turned on in Step S407 (“YES” in S407), control system 500 inputs a control command signal to magnetic sensor 100 at time point tp2 when switch 160 a is turned on (S408). Magnetic sensor 100 receives the control command signal to shift to normal mode (S409). When magnetic sensor 100 is transferred to the normal mode in Step S409, processing unit 70 detects a rotation angle of object magnet 142 based on signals output from magneto-resistive element 12 (S410). Based on the signals output from Hall elements 40 a and 40 b, processing unit 70 determines one quadrant out of the quadrants which includes the detected rotation angle of object magnet 142 (S411). After that, processing unit 70 outputs the rotation-number information and the absolute-angle information to the outside, simultaneously. Herein, the above-mentioned rotation-number information is obtained as a detection result of the rotation angle and the quadrant of the rotation angle. The above-mentioned absolute-angle information is stored in Step S402 and indicates the last number of rotations stored when the intermittent operation mode has been started. The term “simultaneously” does not necessarily mean that two outputs are output at the completely same time, but may include the case where two outputs are output substantially at the same time. In this way, in the intermittent operation mode, magneto-resistive element 12 or processing circuit 10 m does not operate temporarily, thereby reducing power consumption.

In the intermittent operation mode, internal clock S80 b generated by oscillator 80 b is used for various operations of detection circuit 10. The frequency of internal clock S80 b is determined according to a cycle of operations in the intermittent operation mode. The operation based on internal clock S80 b reduces the power consumption, and is highly efficient. Two oscillators 80 a and 80 b can observe (diagnosis) oscillators 80 a and 80 b from each other.

Rotation detecting device 150 used together with switch 160 a detects rotation of rotation shaft 144 to which object magnet 142 serving as a magnetic body is attached. Rotation detecting device 150 includes magneto-resistive element 12 that outputs signals (signal sin, signal cos) related to displacement of the magnetic body (object magnet 142), Hall element 40 a (40 b) that is disposed at a position facing the magnetic body (object magnet 142) and outputs signals (signals S44 a and S44 b) related to displacement of the magnetic body (object magnet 142), and detection circuit 10 to which the above-mentioned signals (signal sin, signal cos) and the above-mentioned signals (signal S44 a, S44 b) are input. Detection circuit 10 is configured to output the above-mentioned signals (signal sin, signal cos) when switch 160 a is turned on. At time point tp1 when switch 160 a is turned off, detection circuit 10 is configured to detect rotation-number information corresponding to the number of rotations of rotation shaft 144 from the above-mentioned signal (signal S44 a, S44 b). Detection circuit 10 is configured to store the rotation-number information. At time point tp2 when switch 160 a is turned on after time point tp1, detection circuit 10 is configured to output the stored rotation-number information.

Detection circuit 10 may use pulse signal S44 a obtained by binarizing an output of Hall element 40 a and use pulse signal S44 b obtained by binarizing an output of Hall element 40 b to detect rotation-number information.

Detection circuit 10 may use the signals (signal sin, signal cos) output from magneto-resistive element 12 to detect absolute-angle information indicating an angle of the magnetic body (object magnet 142) at time point tp2. In this case, detection circuit 10 is configured to output the stored rotation-number information and the stored absolute-angle information simultaneously.

Detection circuit 10 may include oscillator 80 a generating internal clock S80 a, and oscillator 80 b generating internal clock S80 b having a different frequency from internal clock S80 a.

When switch 160 a is turned off, detection circuit 10 may be configured to stop supplying a current supplied to oscillator 80 a and to continue to supply current to oscillator 80 b.

Detection circuit 10 may further include regulators 60 b and 60 c. Regulator 60 b supplies potential V1 to oscillator 80 a. Regulator 60 c supplies potential V2 to oscillator 80 b.

Detection circuit 10 may further include regulator 60 a supplying potential VS (VC) to magneto-resistive element 12.

Regulator 60 b supplies potential V1 to Hall element 40 a (40 b) and oscillator 80 a.

The frequency of internal clock S80 b may be lower than the frequency of internal clock S80 a.

Rotation detecting device 150 (magnetic sensor 100) includes magneto-resistive element 12, Hall element 40 a (40 b), and detection circuit 10 to which a signal from magneto-resistive element 12 and a signal from Hall element 40 a (40 b) are input. Detection circuit 10 includes oscillator 80 a generating internal clock S80 a, regulator 60 b supplying potential V1 to oscillator 80 a, oscillator 80 b generating internal clock S80 b, regulator 60 c supplying potential V2 to oscillator 80 b, and regulator 60 a supplying potential VS (VC) to magneto-resistive element 12.

Regulator 60 b may supply potential V1 to Hall element 40 a (40 b) and oscillator 80 a.

Detection circuit 10 may process the signal from magneto-resistive element 12 and the signal from Hall element 40 a (40 b) based on internal clock S80 a. Detection circuit 10 may process the signal from Hall element 40 a (40 b) based on internal clock S80 b.

Rotation detecting device 150 includes magneto-resistive element 12, Hall element 40 a (40 b), and detection circuit 10 to which a signal from magneto-resistive element 12 and a signal from Hall element 40 a (40 b) are input. Detection circuit 10 includes oscillators 80 a and 80 b. Oscillator 80 a generates internal clock S80 a. Oscillator 80 b generates internal clock S80 b having a different frequency from internal clock S80 a.

FIG. 5 shows an operation of magnetic sensor 100 for detecting a rotation angle of object magnet 142 by using Hall elements 40 a and 40 b, and particularly shows signal S40 a and S40 b output from Hall elements 40 a and 40 b. In FIG. 5, the vertical axis represents values of signal S40 a and S40 b, and the horizontal axis represents a rotation angle of object magnet 142. FIG. 5 shows quadrants including the rotation angle of object magnet 142. Rotation angles of object magnet 142 ranging from 0° to 90° are included in the first quadrant. Rotation angles of object magnet 142 ranging from 90° to 180° are included in the second quadrant. Rotation angles of object magnet 142 ranging from 180° to 270° are included in the third quadrant. Rotation angles of object magnet 142 ranging from 270° to 360° are included in the fourth quadrant.

The signals obtained from the magneto-resistive elements have sine and cosine waves of angles which are twice rotation angle θ of the object magnet. Therefore, a magnetic sensor equipped with only one magneto-resistive element can only detect an angle ranging from 0° to 180°. In such a magnetic sensor, for example, signals at 90° and 270° cannot be distinguished from each other since these angles correspond to the same signal.

On the other hand, as shown in FIG. 5, the signals obtained in a Hall element typically have sine and cosine waves of angles identical to rotation angle θ of an object. Accordingly, a magnetic sensor equipped with a Hall element can detect an angle ranging from 0° to 360°.

Magnetic sensor 100 according to the embodiment includes a combination of a magneto-resistive element and a Hall element. Thus, a rotation angle of object magnet 142 is detected in a range of 0° to 360°.

FIG. 6 shows an operation of detection circuit 10 in which each magneto-resistive element detects a rotation angle of object magnet 142 while switch 160 a is turned off. FIG. 6 shows signal sin+ and signal sin− output from bridge circuit WB1, signal cos+ and signal cos− output from bridge circuit WB2, and signal sin and signal cos output from AD converters 18 a and 18 b which are connected to differential amplifiers 16 a and 16 b, respectively. In FIG. 6, a vertical axis represents a value of each of the signals, and a horizontal axis represents a rotation angle of object magnet 142. FIG. 6 further shows angle signal S70 a output from angle detection circuit 70 a, pulse signals S44 a and S44 b output from comparators 44 a and 44 b, and a quadrant including rotation angle θ of object magnet 142.

Comparators 44 a and 44 b generate pulse signals S44 a and 44 b by binarizing signals from Hall elements 40 a and 40 b, i.e., by comparing signals from Hall elements 40 a and 40 b with threshold S0 to convert the signals into binary signals. When values of signals S40 a and S40 b are more than or equal to threshold S0, pulse signals S44 a and 44 b each have a value at a high level serving as an active level. When values of signals S40 a and S40 b are less than threshold S0, pulse signals S44 a and 44 b each have a value at a low level serving as an inactive level.

Based on pulse signals S44 a and S44 b for quadrant determination, pulse signals S44 a and S44 b are configured to have one pulse for one rotation and can count four quadrants in the one rotation. Specifically, at the time of rise and fall of pulse signal S44 a, the number of pulse signals S44 a or the number of pulse signals S44 b is counted according to a state of pulse signal S44 b. A method of calculating the number of rotations of object magnet 142 will be described below.

In accordance with the embodiment, when rotation angle θ ranges from 0° to 45° or from 225° to 360°, a value of pulse signal S44 a is at the high level. When rotation angle θ ranges from 45° to 225°, the value of pulse signal S44 a is at the low level. When rotation angle θ ranges from 0° to 135° or from 315° to 360°, a value of pulse signal S44 b is at the high level. When rotation angle θ ranges from 135° to 315°, the value of pulse signal S44 b is at the low level. While object magnet 142 rotates in normal rotation direction Df, pulse signal S44 a falls down at a rotation angle θ of 45°, and pulse signal S44 a rises up at a rotation angle θ of 225°. Similarly, while object magnet 142 rotates in normal rotation direction Df, pulse signal S44 b falls down at a rotation angle θ of 135°, and pulse signal S44 b rises up at a rotation angle θ of 315°. On the other hand, while object magnet 142 rotates in reverse rotation direction Dr, pulse signal S44 a rises up at a rotation angle θ of 45°, and pulse signal S44 a falls down at a rotation angle θ of 225°. Similarly, while object magnet 142 rotates in reverse rotation direction Dr, pulse signal S44 b rises up at a rotation angle θ of 135°, and pulse signal S44 b falls down at a rotation angle θ of 315°. Accordingly, when rotation angle θ becomes 45° or 225° at which the value of pulse signal S44 a is changed, rotation number detection circuit 70 b determines the rotation direction.

Object magnet 142 rotates in two directions i.e., normal rotation direction Df and reverse rotation direction Dr opposite to normal rotation direction Df. When the value of pulse signal S44 a changes, rotation number detection circuit 70 b of processing unit 70 detects the rotation direction and the number of rotations of object magnet 142 based on the value of pulse signal S44 b and the change of the value of pulse signal S44 a.

Specifically, in accordance with the embodiment, rotation number detection circuit 70 b will determine that object magnet 142 rotates in normal rotation direction Df by one rotation if detecting that the value of pulse signal S44 b is at the low level at the time when the value of pulse signal S44 a rises to change from the low level to the high level, and subsequently, the value of pulse signal S44 b is at the high level at the time when the value of pulse signal S44 a falls to change from the high level to the low level, and subsequently, the value of pulse signal S44 b is at the low level at the time when pulse signal S44 a rises.

Rotation number detection circuit 70 b determines that object magnet 142 rotates in reverse rotation direction Dr by one rotation if detecting that: the value of pulse signal S44 b is at the high level at the time when pulse signal S44 a rises, and subsequently, the value of pulse signal S44 b is at the low level at the time when pulse signal S44 a falls down, and subsequently, the value of pulse signal S44 b is at the high level at the time when pulse signal S44 a rises.

The rotation angle between object magnet 142 and motor 158 rotating while switch 160 a is turned off can thus be detected precisely with low electric power at the time when switch 160 a is turned on again.

Processing unit 70 of magnetic sensor 100 has an active correction mode and a passive correction mode. The active correction mode is an auto-calibration mode for correcting signal sin and signal cos output from magneto-resistive element 12 via processing circuit 10 m. The passive correction mode is a temperature-characteristic correction mode.

First, an operation of the passive correction mode will be described.

Memory 80 c stores formulas indicating a relation between temperature and offset included in each of signal sin and signal cos output from magneto-resistive element 12 via processing circuit 10 m. In accordance with the embodiment, memory 80 c stores coefficients of polynomial function that approximate the relation between the temperature and the offset included in each of signal sin and signal cos. Memory 80 c further stores formulas indicating a relation between temperature and amplitude of each of signal sin and signal cos converted into digital signals. In accordance with the embodiment, memory 80 c stores coefficients of polynomial function that approximate the relation between the temperatures and the amplitude of each of signal sin and signal cos converted into digital signals.

Temperature sensor 80 d outputs temperature information which is a digital signal corresponding to temperature. Offset-temperature characteristic correction circuit 70 c performs arithmetic processing based on temperature information input from temperature sensor 80 d and the coefficients of relation function between the offset and the temperature stored in memory 80 c. Thus, a change in the offset of each of signal sin and signal cos which depends on temperature is corrected.

Gain-temperature-characteristic correction circuit 70 d performs arithmetic processing based on temperature information input from temperature sensor 80 d and the coefficients of relation function between amplitude and temperature stored in memory 80 c. Thus, a change in amplitude of each of signal sin and signal cos which depends on temperature is corrected.

Next, the active correction mode will be described.

In the active correction mode, automatic correction circuit 70 e generates and updates a correction value for correcting the offset and the amplitude of each of signal sin and signal cos output from magneto-resistive element 12 via processing circuit 10 m. Automatic correction circuit 70 e thus updates the correction value every one rotation of object magnet 142. Based on the updated correction value, signal sin and signal cos are corrected such that signal sin and signal cos continuously have a fixed midpoint and fixed amplitude.

FIG. 7A shows an operation of detection circuit 10 in the active correction mode.

Processing unit 70 determines whether processing unit 70 is in the active correction mode or not (S702). In the active correction mode (“Yes” in step S702), automatic correction circuit 70 e of processing unit 70 stores maximum value Vmax1 and minimum value of signal sin output from magneto-resistive element 12 via processing circuit 10 m, and stores maximum value Vmax2 and minimum value Vmin2 of signal cos output from magneto-resistive element 12 via processing circuit 10 m (S703). After that, automatic correction circuit 70 e determines whether object magnet 142 rotates by one rotation or not (S704). When determining that object magnet 142 rotates by one rotation in step S704 (“Yes” in step S704), automatic correction circuit 70 e performs the calculation of (Vmax1+Vmin1)/2 to generate and update the correction value for correcting the offset of signal sin. Further, automatic correction circuit 70 e performs the calculation of (Vmax2+Vmin2)/2 to generate and update the correction value for correcting the offset of signal cos. At the same time, automatic correction circuit 70 e performs the calculation of (Vmax1−Vmin1) to update the correction value for correcting the amplitude of signal sin. Further, automatic correction circuit 70 e performs the calculation of (Vmax2−Vmin2) to update the correction value for correcting the amplitude of signal cos (S705). After that, the stored maximum values Vmax1 and Vmax2 and the stored minimum values Vmin1 and

Vmin2 are reset to zero (S706). Subsequently, processing unit 70 determines, in step S702, whether processing unit 70 is in active correction mode or not.

Based on the updated offset and amplitude, signal sin and signal cos are corrected until object magnet 142 completes the next one rotation.

When it is determined that object magnet 142 does not rotate by one rotation in step S704 (“No” in step S704), processing unit 70 determines, in step S702, whether processing unit 70 is in the active correction mode or not. In the active correction mode (“Yes” in step S702), automatic correction circuit 70 e continues to store the maximum values Vmax1 and Vmax2 and the minimum values Vmin1 and Vmin2 until object magnet 142 completes the next one rotation. Since that time, the same operation as step S703 is repeated. Automatic correction circuit 70 e continues to store the maximum values Vmax1 and Vma2 and the minimum values Vmin1 and Vmin2 during the one rotation until object magnet 142 completes the next one rotation.

If processing unit 70 is not in the active correction mode (“No” in step S702), processing unit 70 does not perform the process shown in FIG. 7A.

Rotation number detection circuit 70 b determines whether object magnet 142 rotates by one rotation or not based on the pulse signals S44 a and S44 b by the above-mentioned method at the time when the value of rotation angle θ output from angle detection circuit 70 a is jumped to 0° from 360° (normal rotation direction Df) or at the time when the value of rotation angle θ is jumped to 360° from 0° (reverse rotation direction Dr). When a direction (normal rotation direction Df or reversal direction Dr) of the rotation is different from the latest determination, rotation number detection circuit 70 b determines that object magnet 142 does not rotate by one rotation, and automatic correction circuit 70 e does not update the correction values of the offset and amplitude of signal sin and signal cos. The operation will be detailed below.

FIG. 7B and FIG. 7C are schematic diagrams illustrating an operation correcting rotation angle θ detected by rotation number detection circuit 70 b in the active correction mode. In FIG. 7B and FIG. 7C, the vertical axis represents a value of rotation angle θ of object magnet 142 calculated in angle detection circuit 70 a, and a horizontal axis represents time.

In the operation shown in FIG. 7B, object magnet 142 rotates in normal rotation direction Df over a period from before time point t0 until after time point t13. According to this rotation, rotation angle θ output from rotation number detection circuit 70 b increases at time point t0. Rotation angle θ reaches 360° and jumps to 0° at time point t11, and then, starts increasing. Rotation angle θ starts increasing from 0° at time point t11, and then, reaches 360° and jumps to 0° at time point t12, and then starts increasing again. Rotation angle θ starts increasing from 0° at time point t12. Rotation angle θ reaches 360° and jumps to 0° at time point t13, and then, starts increasing again. As mentioned above, based on pulse signals S44 a and S44 b, rotation number detection circuit 70 b determines that object magnet 142 rotates by one rotation in normal rotation direction Df before each of time points t11, t12, and t13. When determining that object magnet 142 rotates in the same direction as the last-time determination, i.e., normal rotation direction Df, automatic correction circuit 70 e updates correction values of offset and amplitude of each of signal sin and signal cos at time points t12 and t13. At time point t11 when the rotation direction is not determined, automatic correction circuit 70 e does not update the correction values of the offset and amplitude each of signal sin and signal cos.

Similarly, when the rotation direction determined last time is the reverse rotation direction and the rotation direction determined at this time is the reverse rotation direction, automatic correction circuit 70 e determines that object magnet 142 rotates by one rotation, and updates the correction values.

In the operation shown in FIG. 7C, object magnet 142 rotates in normal rotation direction Df from before time point t0 until time point t21 p through time point t21, and rotates in reverse rotation direction Dr from time point t21 p until time point t23 p through time points t22 and t23. Then, object magnet 142 rotates in normal rotation direction Df from time point t23 p until after t24. In the operation, the rotation direction in which object magnet 142 is rotated changes at time points t21 p and t23 p. According to the rotation, rotation angle θ output from rotation number detection circuit 70 b increases at time point t0. At time point t21, rotation angle θ reaches 360° and jumps to 0°, and then starts increasing. Rotation angle θ starts increasing from 0° at time point t21. At time point t21 p, rotation angle θ reaches 180°, and then starts decreasing. Rotation angle θ starts decreasing from 180° at time point t21 p. At time point t22, rotation angle θ reaches 0° and jumps to 360°, and then starts decreasing again. Rotation angle θ starts decreasing from 360° at time point t22. At time point t23, rotation angle θ reaches 0° and jumps to 360°, and then starts decreasing again. Rotation angle θ starts decreasing from 360° at time point t23. At time point t23 p, rotation angle θ reaches 270°, and then starts increasing from 270°. Rotation angle θ starts increasing from 270° at time point t23 p. At time point t24, rotation angle θ reaches 360° and jumps to 0°, and then starts increasing again. As mentioned above, based on pulse signals S44 a and S44 b, rotation number detection circuit 70 b determines that object magnet 142 rotates by one rotation in reverse rotation direction Dr before each of time points t22 and t23. When it is determined that object magnet 142 rotates in the same direction as the last time determination, i.e., reverse rotation direction Dr, automatic correction circuit 70 e updates the correction values of the offset and amplitude of each of signal sin and signal cos at time point t23.

As shown in FIG. 7C, the rotation direction at time point t21 in the last time determination is normal rotation direction Df, and a rotation direction at time point t22 in this time determination is reverse rotation direction Dr. In this case, automatic correction circuit 70 e determines that object magnet 142 does not rotate by one rotation, and does not update the correction values.

After that, in the case where the rotation direction at time point t22 in the last time determination is reverse rotation direction Dr and a rotation direction at time point t23 in this time determination is reverse rotation direction Dr, automatic correction circuit 70 e determines that object magnet 142 rotates by one rotation, and updates the correction values.

After that, in the case where the rotation direction at time point t23 in the last time determination is reverse rotation direction Dr and a rotation direction at time point t24 in this time determination is normal rotation direction Df, automatic correction circuit 70 e determines that object magnet 142 does not rotate by one rotation, and does not update the correction values.

When not updating the correction values, automatic correction circuit 70 e does not necessarily generate a correction value.

The correction values are updated in the configuration even when the offset and amplitude of each of signal sin and signal cos from magneto-resistive element 12 change with respect to time. This operation maintains the offset and amplitude constant. At the same time, even when object magnet 142 rotates in both directions, i.e., normal rotation direction Df and reverse rotation direction Dr, offset can be updated correctly.

Magnetic sensor 100 does not preferably operate in the passive correction mode when operating in the active correction mode. Magnetic sensor 100 does not preferably operate in the active correction mode when operating in the passive correction mode. In another expression, magnetic sensor 100 switches between the active correction mode and the passive correction mode to operate. In the configuration, while magnetic sensor 100 operates in the active correction mode, signal sin and signal cos are corrected with respect to all of temporal changes including temperature characteristics. Therefore, magnetic sensor 100 does not necessarily operate in the passive correction mode. On the other hand, in the active correction mode, the correction values are not updated until object magnet 142 rotates by one rotation. Accordingly, in the case where object magnet 142 does not rotate by one rotation, if the offset and the amplitude are changed largely during the rotation of object magnet 142, magnetic sensor 100 operate more preferably in the passive correction mode than in the active correction mode.

In the active correction mode, both the offset and amplitude of the signal are corrected, but not limited to this. At least one of the offset and amplitude may be corrected, i.e., only the offset out of the offset and amplitude may be corrected, or only the gain out of the offset and amplitude may be corrected.

In description of the active correction mode and the passive correction mode, signal sin and signal cos from magneto-resistive element 12 are corrected, but not limited to this. As long as being a magnetic detection element for detecting a magnetic field from object magnet 142 and outputting signal sin and signal cos according to the rotation of object magnet 142, magneto-resistive element 12 is not necessarily made of magneto-resistive material. In other words, the active correction mode and the passive correction mode can be used for correcting signal sin and signal cos of the magnetic detection element.

As mentioned above, rotation detecting device 150 (magnetic sensor 100) for detecting rotation of an object (object magnet 142) includes magnetic detection elements (magneto-resistive elements 12 a and 12 c) that output signal sin, magnetic detection elements (magneto-resistive elements 12 e and 120 that output signal cos, and detection circuit 10 to which signal sin and signal cos are input. Detection circuit 10 includes automatic correction circuit 70 e that performs generation and update of correction values to correct signal sin and signal cos. Automatic correction circuit 70 e is configured to stop the generation or the update of correction values in at least one of the case where a rotation direction of the object (object magnet 142) changes from normal rotation direction Df to reverse rotation direction Dr, or the case where a rotation direction of the object (object magnet 142) changes from reverse rotation direction Dr to normal rotation direction Df.

Detection circuit 10 may further include angle detection circuit 70 a that outputs an angle signal indicating the rotation angle of the object (object magnet 142) based on signal sin and signal cos. In this case, a rotation direction in which an angle of the angle signal changes to 0° from 360° is normal rotation direction Df. A rotation direction in which an angle of the angle signal changes to 360° from 0° is reverse rotation direction Dr.

Signal sin is a sine wave signal, and signal cos is a sine wave signal. Detection circuit 10 may further include angle detection circuit 70 a that performs an arc tangent calculation on signal sin and signal cos to obtain the angle signal. In this case, a rotation direction in which an angle of the angle signal changes to 0° from 360° is normal rotation direction Df, and a rotation direction in which the angle changes from 0° to 360° is reverse rotation direction Dr.

Detection circuit 10 may further include temperature-characteristic correction circuit 70 p that corrects at least one of the amplitude and offset of each of signal sin and signal cos according to the temperature. In this case, detection circuit 10 has an active correction mode in which automatic correction circuit 70 e corrects signal sin and signal cos without temperature-characteristic correction circuit 70 p, and a passive correction mode in which temperature-characteristic correction circuit 70 p corrects signal sin and signal cos without automatic correction circuit 70 e. Detection circuit 10 is configured to switch between the active correction mode and the passive correction mode.

Detection circuit 10 may further include temperature sensor 80 d that detects temperature, and memory 80 c that stores plural values of the offset of signal sin each corresponding to respective one of plural values of the temperature. In this case, temperature-characteristic correction circuit 70 p adds a value of the offset corresponding to a value of the detected temperature out of the stored plural values of the offset to signal sin.

Memory 80 c may store plural values related to the offset of the differential signal each corresponding to respective one of plural values of the temperature. In this case, temperature-characteristic correction circuit 70 p adds a value related to the offset corresponding to a value of the detected temperature out of the stored plural values related to the offset to signal sin.

Memory 80 c may store plural values related to the amplitude of signal sin each corresponding to respective one of plural values of the temperature. In this case, temperature-characteristic correction circuit 70 p adds, to signal sin, a value related to the amplitude corresponding to a value of the detected temperature out of the stored plural values related to the amplitude.

Memory 80 c may store plural values related to the amplitude of the differential signal each corresponding to respective one of plural values of the temperature. In this case, temperature-characteristic correction circuit 70 p adds, to signal sin, a value related to the amplitude corresponding to the detected value of the temperature out of the stored plural values related to the amplitude.

The magnetic detection elements (magneto-resistive elements 12 a and 12 c) and the magnetic detection elements (magneto-resistive elements 12 e and 120 may contain magneto-resistive material.

Rotation detecting device 150 (magnetic sensor 100) that detects rotation of the object (object magnet 142) includes magnetic detection elements (magneto-resistive elements 12 a and 12 c) that output signal sin, magnetic detection elements (magneto-resistive elements 12 e and 120 that output signal cos, and detection circuit 10 to which signal sin and signal cos are input. Detection circuit 10 includes temperature-characteristic correction circuit 70 p that corrects at least one of amplitude and offset of each of signal sin and signal cos according to the temperature, and automatic correction circuit 70 e that performs generation and update of correction values to correct signal sin and signal cos.

Detection circuit 10 may further include angle detection circuit 70 a that outputs an angle signal indicating an angle of the object (object magnet 142) based on signal sin and signal cos.

When the angle indicated by the angle signal changes to 0° from 360° again after changing to 0° from 360°, or when the angle indicated by the angle signal changes to 360° from 0° again after changing to 360° from 0°, automatic correction circuit 70 e may perform at least one of the generation and the update of the correction values.

When temperature-characteristic correction circuit 70 p operates, automatic correction circuit 70 e does not necessarily operate.

Rotation detecting device 150 including the magnetic detection elements (magneto-resistive elements 12 a and 12 c) and the magnetic detection elements (magneto-resistive elements 12 e and 12 f) and detecting rotation of the object (object magnet 142) corrects signals by the method below. According to the rotation of the object (object magnet 142), signal sin and signal cos are obtained from the magnetic detection elements (magneto-resistive elements 12 a and 12 c) and the magnetic detection elements (magneto-resistive elements 12 e and 12 f), respectively. Signal sin, signal cos, and a correction value for correction are generated and updated. Rotation detecting device 150 detects that the rotation direction of the object (object magnet 142) changes to reverse rotation direction Dr from normal rotation direction Df or that the rotation direction of an object (object magnet 142) changes to normal rotation direction Df from reverse rotation direction Dr. When detecting that the rotation direction of the object (object magnet 142) changes to reverse rotation direction Dr from normal rotation direction Df or that the rotation direction of the object (object magnet 142) changes to normal rotation direction Df from reverse rotation direction Dr, rotation detecting device 150 stops the above-mentioned operation i.e., the generation and the update of correction values.

The angle signal indicating an angle of the object (object magnet 142) may be obtained from signal sin and signal cos. In this case, a direction in which the angle indicated by the angle signal changes to 0° from 360° is defined as normal rotation direction Df. A direction in which the angle changes from 0° to 360° is defined as reverse rotation direction Dr.

FIG. 8 is a block diagram of another magnetic sensor 100 a in accordance with the embodiment. In FIG. 8, components identical to those of magnetic sensor 100 shown in FIGS. 1A and 1B are denoted by the same reference numerals. Magnetic sensor 100 a includes detection circuit 10 a mounted on substrate 10 p instead of detection circuit 10 of magnetic sensor 100 shown in FIG. 1A. Detection circuit 10 a further includes diagnostic circuits 90 and 91, switches 110 a and 110 b, and resistors 112 a and 112 b.

End 12 a-2 of magneto-resistive element 12 a and end 12 b-1 of magneto-resistive element 12 b are connected to potential VS (see FIG. 1B). End 12 c-2 of magneto-resistive element 12 c and end 12 d-1 of magneto-resistive element 12 d are connected to ground GND (see FIG. 1B). End 12 a-1 of magneto-resistive element 12 a is connected to detection circuit 10 a via wiring 100 a 1. End 12 b-2 of magneto-resistive element 12 b is connected to detection circuit 10 a via wiring 100 a 2. End 12 c-1 of magneto-resistive element 12 c is connected to detection circuit 10 a via wiring 100 a 3. End 12 d-2 of magneto-resistive element 12 d is connected to detection circuit 10 a via wiring 100 a 4.

Inside detection circuit 10 a, wiring 100 a 1 and 100 a 3 are connected to each other at node 12 ac 1. Inside detection circuit 10 a, end 12 a-1 of magneto-resistive element 12 a and end 12 c 1 of magneto-resistive element 12 c are connected to each other at node 12 ac 1 via wirings 100 a 1 and 100 a 3. Node 12 ac 1 constitutes a midpoint of bridge circuit WB1. A signal at node 12 ac 1 is input to amplifier 14 b to be amplified, and then, input to differential amplifier 16 a.

Inside detection circuit 10 a, wirings 100 a 2 and 100 a 4 are connected to each other at node 12 bd 1. Inside detection circuit 10 a, end 12 b-2 of magneto-resistive element 12 b and end 12 d-2 of magneto-resistive element 12 d are connected to each other at node 12 bd 1 via wirings 100 a 2 and 100 a 4. Node 12 bd 1 constitutes another midpoint of bridge circuit WB1. A signal at node 12 bd 1 is input to amplifier 14 a to be amplified, and then, input to differential amplifier 16 a.

End 12 e-2 of magneto-resistive element 12 e and end 12 f-1 of magneto-resistive element 12 f are connected to potential VC (see FIG. 1B). End 12 g-2 of magneto-resistive element 12 g and end 12 h-1 of magneto-resistive element 12 h are connected to ground GND (see FIG. 1B). End 12 e-1 of magneto-resistive element 12 e is connected to detection circuit 10 a via wiring 100 b 1. End 12 f-2 of magneto-resistive element 12 f is connected to detection circuit 10 a via wiring 100 b 2. End 12 g-1 of magneto-resistive element 12 g is connected to detection circuit 10 a via wiring 100 b 3. End 12 h-2 of magneto-resistive element 12 h is connected to detection circuit 10 a via wiring 100 b 4.

End 12 e-1 of magneto-resistive element 12 e is connected to detection circuit 10 a via wiring 100 b 1. End 12 f-2 of magneto-resistive element 12 f is connected to detection circuit 10 a via wiring 100 b 2. End 12 g-1 of magneto-resistive element 12 g is connected to detection circuit 10 a via wiring 100 b 3. End 12 h-2 of magneto-resistive element 12 h is connected to detection circuit 10 a via wiring 100 b 4.

Inside detection circuit 10 a, wirings 100 b 1 and 100 b 3 are connected to each other at node 12 eg 1. Inside detection circuit 10 a on substrate 10 p, end 12 e-1 of magneto-resistive element 12 e and end 12 g-1 of magneto-resistive element 12 g are connected to each other at node 12 eg 1 via wirings 100 b 1 and 200 b 3. Node 12 eg 1 constitutes a midpoint of bridge circuit WB2. A signal at node 12 eg 1 is input to amplifier 14 d to be amplified, and then, input to differential amplifier 16 b.

Inside detection circuit 10 a, wirings 100 b 2 and 100 b 4 are connected to each other at node 12 fh 1. Inside detection circuit 10 a, end 12 f-2 of magneto-resistive element 12 f and end 12 h-2 of magneto-resistive element 12 h are connected to each other at node 12 fh 1. Node 12 fh 1 constitutes another midpoint of bridge circuit WB2. A signal at node 12 fh 1 is input to amplifier 14 c to be amplified, and then, input into differential amplifier 16 b.

Wirings 100 a 1 to 100 a 4 and wirings 100 b 1 to 100 b 4 are bonding wires, such as metal wires employed for wire bonding.

Magnetic sensor 100 a can detect disconnection of wirings 100 a 1 to 100 a 4 and wirings 100 b 1 to 100 b 4 which connect detection circuit 10 a to magneto-resistive element 12. The operation will be described below.

In a normal operation, i.e., when none of wirings 100 a 1 to 100 a 4 and 100 b 1 to 100 b 4 are disconnected, the potentials of nodes 12 ac 1 12 bd 1, 12 eg 1, and 12 fh 1 being signals output from magneto-resistive element 12 are substantially equal to potentials of the midpoints. As a result, outputs of amplifiers 14 a to 14 d, differential amplifiers 16 a and 16 b, and AD converter 18 a are substantially equal to the potentials of the midpoints. On the other hand, if a wiring out of wirings 100 a 1 to 100 a 4 and wirings 100 b 1 to 100 b 4 is disconnected, a node out of nodes 12 ac 1, 12 bd 1, 12 eg 1, and 12 fh 1 connected to the disconnected wiring becomes either one of potential VS, potential VC, or a ground potential. Potential VS and potential VC are fixed potentials. Accordingly, the outputs of amplifiers 14 a to 14 d, differential amplifiers 16 a and 16 b, and AD converters 18 a and 18 b are fixed to have either one of potential VS, potential VC, or the ground potential, which are fixed potential. As a result, when detecting that the output of AD converter 18 a or AD converter 18 b deviates from a predetermined normal operation range, diagnostic circuit 90 determines that magnetic sensor 100 a is in an abnormal operation, and then, outputs an abnormal signal. This configuration can detect the disconnection of wirings connecting magneto-resistive element 12 to detection circuit 10 a.

When detecting that the output of differential amplifier 16 a or 16 b, rather than AD converter 18 a or 18 b, deviates from the predetermined normal operation range, diagnostic circuit 90 determines that magnetic sensor 100 a is in an abnormal operation, and may output an abnormal signal.

Bridge circuit WB1 constituted by magneto-resistive elements 12 a to 12 b, and bridge circuit WB2 constituted by magneto-resistive elements 12 e to 12 h are provided on substrate 12 p. Detection circuit 10 a is provided on substrate 10 p. The midpoints constituted by nodes 12 ac 1 and 12 bd 1 of bridge circuit WB1 are provided on substrate 10 p. The midpoints constituted by nodes 12 eg 1 and 12 fh 1 of bridge circuit WB2 are provided on substrate 10 p.

Magnetic sensor 100 a can detect abnormalities in resistances of magneto-resistive element 12. The operation will be described below.

Switch 110 a has common end 110 a 3, and branch ends 110 a 1 and 110 a 2. Switch 110 a can connect common end 110 a 3 electively or exclusively to branch end 110 a 1 and branch end 110 a 2. Common end 110 a 3 of switch 110 a is directly connected to node 12 ab of magneto-resistive element 12. Branch end 110 a 1 is directly connected to regulator 60 a. Branch end 110 a 2 is connected to regulator 60 a through resistor 112 a. Resistor 112 a is connected in series with branch end 110 a 2 and regulator 60 a. By disconnecting common end 110 a 3 of switch 110 a from branch end 110 a 2 and connecting common end 110 a 3 to branch end 110 a 1, switch 110 a constitutes current path 112 a 1 that supplies potential VS to magneto-resistive element 12. By disconnecting common end 110 a 3 of switch 110 a from branch end 110 a 1 and connecting common end 110 a 3 to branch end 110 a 2, switch 110 a constitutes current path 112 a 2 that supplies potential VS to magneto-resistive element 12. Current path 112 a 2 has a larger resistance than current path 112 a 1.

Switch 110 b has common end 110 b 3 and branch ends 110 b 1 and 110 b 2. Switch 110 b can connect common end 110 b 3 selectively or exclusively to branch end 110 b 1 and branch end 110 b 2. Common end 110 b 3 of switch 110 b is directly connected to node 12 ef of magneto-resistive element 12. Branch end 110 b 1 is directly connected to regulator 60 a. Branch end 110 b 2 is connected to regulator 60 a through resistor 112 b. Resistor 112 b is connected in series with branch end 110 b 2 and regulator 60 a. By disconnecting common end 110 b 3 of switch 110 b from branch end 110 b 2 and connecting common end 110 b 3 to branch end 110 b 1, switch 110 b constitutes current path 112 b 1 that supplies potential VC to magneto-resistive element 12. By disconnecting common end 110 b 3 of switch 110 b from branch end 110 b 1 and connecting common end 110 b 3 to branch end 110 b 2, switch 110 b constitutes current path 112 b 2 that supplies potential VS to magneto-resistive element 12. Current path 112 b 2 has a larger resistance than current path 112 b 1.

Switches 110 a and 110 b can switch a state of magneto-resistive element 12 between a state where magneto-resistive element 12 is connected to regulator 60 a of detection circuit 10 a through resistors 112 a and 112 b and a state where magneto-resistive element 12 is directly connected to regulator 60 a without through resistors 112 a and 112 b. In the normal operation, i.e., when no abnormalities are detected in the resistances of magneto-resistive element 12, switches 110 a and 110 b select current path 112 a 1 and 112 b 1 in which magneto-resistive element 12 is directly connected to regulator 60 a. When the resistances of magneto-resistive element 12 are diagnosed, switches 110 a and 110 b select current path 112 a 2 and 112 b 2 in which magneto-resistive element 12 is connected to regulator 60 a through resistors 112 a and 112 b. Diagnostic circuit 91 is connected to regulator 60 a, and measures a voltage across both ends of each of resistors 112 a and 112 b or currents I112 a and I112 b flowing through resistors 112 a and 112 b. If magneto-resistive element 12 has a normal resistance and wirings supplying potential VS and VC are not disconnected, currents I112 a and I112 b flowing through resistors 112 a and 112 b is within a predetermined normal range. If a fault occurs in magneto-resistive element 12 to cause abnormalities in resistance, or if the wirings supplying potential VS and VC is disconnected, currents I112 a and I112 b flowing through resistors 112 a and 112 b deviate from the predetermined normal range. When currents I112 a and I112 b deviate from the normal range, diagnostic circuit 91 determines that abnormalities occur, and outputs an abnormal signal. With the configuration, abnormalities in resistance of magneto-resistive element 12 and disconnection of wirings for supplying potential VS and VC can be detected. Even when sheet resistance of magneto-resistive element 12 changes, i.e., resistance of four magneto-resistive elements which constitute bridge circuits WB1 and WB2 changes by the same amount at the same time, abnormalities can be detected based on currents I112 a and I112 b, as mentioned above.

The period of time when current path 112 a 2 connected to regulator 60 a through resistor 112 a is elected, i.e., when bridge circuit WB1 is diagnosed is preferably different from a period of time when current path 112 b 2 connected to regulator 60 a through resistor 112 b is selected, i.e., when bridge circuit WB2 is diagnosed. This configuration allows the current flowing through bridge circuit WB1 and the current flowing through bridge circuit WB2 to be input to diagnostic circuit 91 subsequently, thereby diagnosing bridge circuits WB1 and WB2 without enlarging the circuit scale of diagnostic circuit 91.

Rotation detecting device 150 (magnetic sensor 100 a) includes substrate 12 p, magneto-resistive elements 12 a to 12 d that are provided on substrate 12 p to constitute bridge circuit WB1, substrate 10 p, detection circuit 10 a that is provided on substrate 10 p and connected to magneto-resistive elements 12 a to 12 d, wiring 100 a 1 connecting between end 12 a-1 of magneto-resistive element 12 a and detection circuit 10 a, wiring 100 a 3 connecting between end 12 c-1 of magneto-resistive element 12 c and detection circuit 10 a, wiring 100 a 2 connecting between end 12 b-2 of magneto-resistive element 12 b and detection circuit 10 a, wiring 100 a 4 connecting between end 12 d-2 of magneto-resistive element 12 d and detection circuit 10 a, node 12 ac 1 that is provided on substrate 10 p and combines a signal on wiring 100 a 1 with a signal on wiring 100 a 3, and node 12 bd 1 that is provided on substrate 10 p and combines a signal on wiring 100 a 2 with a signal on wiring 100 a 4. Detection circuit 10 a includes amplifier 14 b that is provided on substrate 10 p and amplifies a signal at node 12 ac 1, and amplifier 14 a that is provided on substrate 10 p and amplifies a signal at node 12 bd 1.

Node 12 ac 1 and node 12 bd 1 constitute a midpoint (node 12 ac 1) and a midpoint (node 12 bd 1) of bridge circuit WB1, respectively.

Wirings 100 a 1 to 100 a 4 may be bonding wires.

Detection circuit 10 a may further include differential amplifier 16 a that amplifies a difference between a signal from amplifier 14 b and a signal from amplifier 14 a.

Detection circuit 10 a may further include diagnostic circuit 90 to which a signal from differential amplifier 16 a is input.

Diagnostic circuit 90 may output an abnormal signal when an output from differential amplifier 16 a deviates from a predetermined range.

Detection circuit 10 a may include analog-to-digital (AD) converter 18 a to which a signal is input from differential amplifier 16 a.

Diagnostic circuit 90 may output an abnormal signal when an output of AD converter 18 a deviates from a predetermined range.

End 12 a-2 of magneto-resistive element 12 a and end 12 b-1 of magneto-resistive element 12 b are connected to reference potential VS. End 12 c-2 of magneto-resistive element 12 c and end 12 d-1 of magneto-resistive element 12 d are connected to ground GND.

Rotation detecting device 150 (magnetic sensor 100 a) includes substrate 12 p, magneto-resistive elements 12 a to 12 d that are provided on substrate 12 p to constitute bridge circuit WB1, substrate 10 p, detection circuit 10 a that is provided on substrate 10 p and connected to magneto-resistive elements 12 a to 12 d, wiring 100 a 1 connecting between end 12 a-1 of magneto-resistive element 12 a and detection circuit 10 a, wiring 100 a 2 connecting between end 12 b-2 of magneto-resistive element 12 b and detection circuit 10 a, wiring 100 a 3 connecting between end 12 c-1 of magneto-resistive element 12 c and detection circuit 10 a, wiring 100 a 4 connecting between end 12 d-2 of magneto-resistive element 12 d and detection circuit 10 a. A midpoint (node 12 ac 1) and a midpoint (node 12 bd 1) of bridge circuit WB1 are provided on substrate 10 p.

Detection circuit 10 a may include amplifier 14 b that amplifies a signal at the midpoint (node 12 ac 1), amplifier 14 a that amplifies a signal at the midpoint (node 12 bd 1), and differential amplifier 16 a that amplifies a difference between a signal from amplifier 14 b and a signal from amplifier 14 a.

Detection circuit 10 a may further include diagnostic circuit 90 to which a signal from differential amplifier 16 a is input.

Detection circuit 10 a may further include analog-to-digital (AD) converter 18 a to which a signal is input from differential amplifier 16 a, and diagnostic circuit 90 to which an output of AD converter 18 a is input.

End 12 a-2 of magneto-resistive element 12 a and end 12 b-1 of magneto-resistive element 12 b are connected to reference potential VS. End 12 c-2 of magneto-resistive element 12 c and end 12 d-1 of magneto-resistive element 12 d are connected to ground GND.

Magnetic sensor 100 a includes magneto-resistive element 12 a that outputs signal sin+, magneto-resistive element 12 e that outputs signal cos−, and detection circuit 10 a to which signal sin+ and signal cos− are input. Detection circuit 10 a includes regulator 60 a that supplies potential VS and VC to magneto-resistive elements 12 a and 12 e, respectively, current path 112 a 1 that electrically connects magneto-resistive element 12 a to regulator 60 a, current path 112 a 2 with resistor 112 a that electrically connects magneto-resistive element 12 a to regulator 60 a, current path 112 b 1 that electrically connects magneto-resistive element 12 e to regulator 60 a, current path 112 b 2 with resistor 112 b that electrically connects magneto-resistive element 12 e to regulator 60 a, switch 110 a that switches between current path 112 a 1 and current path 112 a 2, switch 110 b that switches between current path 112 b 1 and current path 112 b 2, and diagnostic circuit 91 connected to current path 112 a 2 and current path 112 b 2.

Diagnostic circuit 91 is connected to both ends of resistor 112 a and both ends of resistor 112 b.

Magneto-resistive element 12 a are combined with three other magneto-resistive elements 12 b to 12 c to constitute bridge circuit WB1, and magneto-resistive element 12 e are combined with three other magneto-resistive elements 12 f to 12 h to constitute bridge circuit WB2.

Magneto-resistive element 12 e and magneto-resistive element 12 a are made of the same material, and magneto-resistive element 12 a coincides with a configuration in which magneto-resistive element 12 e is rotated at 45°.

Magnetic sensor 100 a includes magneto-resistive element 12 a that outputs signal sin+, and detection circuit 10 a to which signal sin+ is input. Detection circuit 10 a includes regulator 60 a that supplies potential VS to magneto-resistive element 12 a, current path 112 a 1 that electrically connects magneto-resistive element 12 a to regulator 60 a, current path 112 a 2 with resistor 112 a that electrically connects magneto-resistive element 12 a to regulator 60 a, switch 110 a that switches between current path 112 a 1 and current path 112 a 2, and diagnostic circuit 91 connected to current path 112 a 2.

Diagnostic circuit 91 is connected to both ends of resistor 112 a.

Rotation detecting device 150 includes magnetic sensor 100 a, object magnet 142 that generates a magnetic field detected by magnetic sensor 100 a, rotation shaft 144 to which object magnet 142 is attached, bearing 146 for supporting rotation shaft 144, and motor 158 that rotates rotation shaft 144.

Magnetic sensor 100 a includes magneto-resistive element 12 a that outputs signal sin+, magneto-resistive element 12 e that outputs signal cos−, and regulator 60 a connected to magneto-resistive elements 12 a and 12 e. Magnetic sensor 100 a can be diagnosed by the following method. Potential VS is supplied to magneto-resistive element 12 a from regulator 60 a through current path 112 a 1. Potential VS is supplied to magneto-resistive element 12 a from regulator 60 a through current path 112 a 2 having a larger resistance than current path 112 a 1 so as to cause current I112 a to flow through magneto-resistive element 12 a. Potential VC is supplied to magneto-resistive element 12 e from regulator 60 a through current path 112 b 1. Potential VC is supplied to magneto-resistive element 12 e from regulator 60 a through current path 112 b 2 having a larger resistance than current path 112 b 1 so as to cause current I112 b to flow through magneto-resistive element 12 e. When current I112 a deviates from a predetermined range, it is determined that magneto-resistive element 12 a is in an abnormal operation. When current I112 b deviates from a predetermined range, it is determined that magneto-resistive element 12 e is in an abnormal operation.

A period of time when current I112 b flows through magneto-resistive element 12 e may be different from a period of time when current I112 a flows through magneto-resistive element 12 a. A period of time when it is determined that magneto-resistive element 12 e is in the abnormal operation may be different from a period of time when it is determined that magneto-resistive element 12 a is in the abnormal operation.

FIG. 9 is a top view of magnetic sensor 100 (100 a). FIG. 10 is a side view of magnetic sensor 100 (100 a). In FIG. 9, the structure of magnetic sensor 100 (100 a) is partially omitted. In magnetic sensor 100 (100 a) shown in FIG. 9, each of Hall elements 40 a and 40 b is a longitudinal type of Hall element that detects a magnetic field parallel to substrate 10 p on which detection circuit 10 is provided.

Magnetic sensor 100 (100 a) includes magneto-resistive element 12, detection circuit 10, lead frame 130, wire 134, sealing resin 136, and terminal 132. Magneto-resistive elements 12 a to 12 d constitute magneto-resistive element group 12 x that forms bridge circuit WB1. Magneto-resistive elements 12 e to 12 h constitute magneto-resistive element group 12 y that forms bridge circuit WB2. Magneto-resistive element 12 and detection circuit 10 are disposed on lead frame 130. Sealing resin 136 seals magneto-resistive element 12, detection circuit 10, and lead frame 130. Terminal 132 extends from sealing resin 136 to connect detection circuit 10 electrically to the outside.

Straight line L1 passes substantially through center 12 xc of magneto-resistive element group 12 x constituted by magneto-resistive elements 12 a to 12 d and center 12 yc of magneto-resistive element group 12 y constituted by magneto-resistive elements 12 e to 12 h. Hall elements 40 a and 40 b are arranged symmetrically to each other with respect to straight line L1. In more detail, a direction of a magnetic field detected by Hall elements 40 a and 40 b inclines by 45° with respect to straight line L1.

Each of magneto-resistive elements 12 a to 12 d is made of magnetic resistance pattern 12 t slenderly extending perpendicularly to a direction of the magnetic field to be detected. Magnetic resistance pattern 12 t of magneto-resistive element 12 a extends slenderly along straight line L4. Magnetic resistance pattern 12 t of magneto-resistive element 12 c extends slenderly along straight line L6. Straight lines L4 and L6 extend symmetrically to each other with respect to straight line L1. Straight line L4 inclines by 45° with respect to straight line L1. Straight line L6 inclines by 45° with respect to straight line L1. Straight line L4 inclines by 90° with respect to straight line L6. Each of magneto-resistive elements 12 e to 12 h is made of magnetic resistance pattern 12 s slenderly extending perpendicularly to a direction of the magnetic field to be detected. Magnetic resistance patterns 12 t and 12 s are made of magneto-resistive material that has a magneto-resistive effect. Hall elements 40 a and 40 b detect magnetic field along straight lines L3 and L5 passing substantially through the respective centers of Hall elements 40 a and 40 b. Straight line L3 passing substantially through the center of Hall element 40 a is parallel to magnetic resistance pattern 12 t of any one of magneto-resistive elements 12 a to 12 d. Straight line L3 is parallel to magnetic resistance pattern 12 t of magneto-resistive element 12 a, and therefore, is parallel to straight line L4. Straight line L5 passing substantially through the center of Hall element 40 b is parallel to magnetic resistance pattern 12 t of any one of magneto-resistive elements 12 a to 12 d. Straight line L5 is parallel to magnetic resistance pattern 12 t of magneto-resistive element 12 c, and therefore, is parallel to straight line L6.

Hall element 40 b has a configuration identical to that of Hall element 40 a rotating by 90°. Magneto-resistive element 12 b has a configuration identical to that of magneto-resistive element 12 a rotating by 90°. Magneto-resistive element 12 d has a configuration identical to that of magneto-resistive element 12 c rotating by 90°. Magneto-resistive element 12 c has a configuration identical to that of magneto-resistive element 12 a rotating by 90°. Magneto-resistive element 12 d has a configuration identical to that of magneto-resistive element 12 b rotating by 90°.

Each of Hall elements 40 a and 40 b is a longitudinal type of Hall element that detects a magnetic field parallel to substrate 10 p on which detection circuit 10 is provided. Accordingly, to easily obtain a magnetic field parallel to substrate 10 p, Hall elements 40 a and 40 b are preferably provided near the center of substrate 10 p. Thus, Hall elements 40 a and 40 b can detect the angle accurately.

In accordance with the embodiment, magnetic sensor 100 (100 a) is attached to motor 158 assisting steering wheel 152 and steering shaft 154, but not limited to this. For instance, magnetic sensor 100 (100 a) may be used for detecting a position of a shift lever of a vehicle. In other words, magnetic sensor 100 (100 a) may be used independently as a stand-alone unit.

Diagnostic circuit 90 may be a part of processing unit 70.

As described above, magnetic sensor 100 includes substrate 12 p, magneto-resistive element group 12 x that is provided on substrate 12 p and constituted by plural magneto-resistive elements 12 a to 12 d constituting bridge circuit WB1, magneto-resistive element group 12 y that is provided on substrate 12 p and constituted by plural magneto-resistive elements 12 e to 12 h constituting bridge circuit WB2, substrate 10 p, Hall elements 40 a and 40 b provided on substrate 10 p, and detection circuit 10 that is provided on substrate 10 p and receives a signal from magneto-resistive element group 12 x, a signal from magneto-resistive element group 12 y, a signal from Hall element 40 a, and a signal from Hall element 40 b. Each of Hall elements 40 a and 40 b is a longitudinal type Hall element detecting a magnetic field parallel to substrate 10 p. Hall element 40 a and Hall element 40 b are arranged symmetrically to each other with respect to straight line L1. Straight line L1 passes substantially through center 12 xc of magneto-resistive element group 12 x and center 12 yc of magneto-resistive element group 12 y.

A direction of the magnetic field detected by Hall element 40 a may incline by 45° with respect to straight line L1. A direction of the magnetic field detected by Hall element 40 b may incline by 45° with respect to straight line L1.

Magneto-resistive element 12 a out of plural magneto-resistive elements 12 a to 12 d of magneto-resistive element group 12 x includes magnetic resistance pattern 12 t made of magneto-resistive material. Magneto-resistive element 12 b out of plural magneto-resistive elements 12 a to 12 d of magneto-resistive element group 12 x includes magnetic resistance pattern 12 t made of magneto-resistive material. Straight line L3 passing substantially through the center of Hall element 40 a may be parallel to magnetic resistance pattern 12 t of magneto-resistive element 12 a. Straight line L4 passing substantially through the center of Hall element 40 b may be parallel to magnetic resistance pattern 12 t of magneto-resistive element 12 b.

Hall elements 40 a and 40 b are made of the same material. Hall element 40 a has a configuration identical to that of Hall element 40 b rotating by 90°.

Plural magneto-resistive elements 12 a to 12 d of magneto-resistive element group 12 x are made of the same material. Magneto-resistive element 12 a out of plural magneto-resistive elements 12 a to 12 d of magneto-resistive element group 12 x has a configuration identical to that of magneto-resistive element 12 b out of magneto-resistive elements 12 a to 12 d of magneto-resistive element group 12 x which rotates by 90°.

As described above, magnetic sensor 100 includes magneto-resistive element group 12 x constituted by plural magneto-resistive elements 12 a to 12 d, magneto-resistive element group 12 y constituted by plural magneto-resistive elements 12 e to 12 h, Hall element 40 a, Hall element 40 b, detection circuit 10 to which signals from magneto-resistive element groups 12 x and 12 y and signals from Hall elements 40 a and 40 b are input. Plural magneto-resistive elements 12 a to 12 d of magneto-resistive element group 12 x include magneto-resistive element 12 a including magnetic resistance pattern 12 t, and magneto-resistive element 12 b including magnetic resistance pattern 12 t. Straight line L3 passing substantially through the center of Hall element 40 a is parallel to magnetic resistance pattern 12 t of magneto-resistive element 12 a. Straight line L5 passing substantially through the center of Hall element 40 b is parallel to magnetic resistance pattern 12 t of magneto-resistive element 12 b.

Hall element 40 a may be arranged such that Hall element 40 a inclines by 45° with respect to straight line L1 passing substantially through center 12 xc of magneto-resistive element group 12 x and center 12 yc of magneto-resistive element group 12 y. Hall element 40 b may be arranged such that Hall element 40 b inclines by 45° with respect to straight line L1.

Hall elements 40 a and 40 b may be symmetrical to each other with respect to straight line L1 passing substantially through center 12 xc of magneto-resistive element group 12 x and center 12 yc of magneto-resistive element group 12 y.

Magneto-resistive element group 12 x constitutes bridge circuit WB1, and magneto-resistive element group 12 y constitutes bridge circuit WB2.

REFERENCE MARKS IN THE DRAWINGS

-   10 detection circuit -   12 magneto-resistive element -   12 a-12 h magneto-resistive element -   12 t, 12 s magnetic resistance pattern -   12 ac, 12 bd, 12 eg, 12 fh node (midpoint) -   12 x magneto-resistive element group -   12 y magneto-resistive element group -   14 a-14 d amplifier -   15 offset control circuit -   16 a, 16 b differential amplifier -   17 gain control circuit -   18 a, 18 b AD converter -   40 a, 40 b Hall element -   42 a, 42 b amplifier -   44 a, 44 b comparator -   60 a-60 c regulator -   70 processing unit -   70 a angle detection circuit -   70 b rotation number detection circuit -   70 c offset-temperature-characteristic correction circuit -   70 d gain-temperature-characteristic correction circuit -   70 e automatic correction circuit -   80 a, 80 b oscillator -   80 c memory -   80 d temperature sensor -   90, 91 diagnostic circuit -   100 magnetic sensor -   100 a 1-100 a 4 wiring -   100 b 1-100 b 4 wiring -   112 a, 112 b resistor -   112 a 1, 112 a 2, 112 b 1, 112 b 2 current path -   WB1, WB2 bridge circuit 

The invention claimed is:
 1. A rotation detecting device configured to detect rotation of an object, the rotation detecting device comprising: a first magnetic detection element that outputs a first signal; a second magnetic detection element that outputs a second signal; and a detection circuit to which the first signal and the second signal are input, wherein the detection circuit includes an automatic correction circuit that performs generating and updating a correction value for correcting the first signal and the second signal, and wherein the automatic correction circuit is configured to stop generating or updating the correction value when a rotation direction of the object is changed to a reverse rotation direction from a normal rotation direction or when the rotation direction of the object is changed to the normal rotation direction from the reverse rotation direction.
 2. The rotation detecting device according to claim 1, wherein the detection circuit further includes an angle detection circuit that outputs an angle signal indicating a rotation angle of the object based on the first signal and the second signal, wherein the normal rotation direction is a rotation direction in which the angle indicated by the angle signal is changed to 0° from 360°, and wherein the reverse rotation direction is a rotation direction in which the angle indicated by the angle signal is changed to 360° from 0°.
 3. The rotation detecting device according to claim 1, wherein the first signal is a sine wave signal, wherein the second signal is a cosine wave signal, wherein the detection circuit further includes an angle detection circuit that performs an arc-tangent calculation on the first signal and the second signal to obtain the angle signal, and wherein the normal rotation direction is a direction in which the angle indicated by the angle signal is changed to 0° from 360°, and the reverse rotation direction is a direction in which the angle is changed to 360° from 0°.
 4. The rotation detecting device according to claim 1, wherein the first signal is a sine wave signal, and wherein the second signal is a sine wave signal.
 5. The rotation detecting device according to claim 1, wherein the detection circuit further includes a temperature-characteristic correction circuit that corrects at least one of amplitude or offset of each of the first signal and the second signal according to temperature, wherein the detection circuit comprises a first mode in which the first signal and the second signal are corrected by the automatic correction circuit without the temperature-characteristic correction circuit, and a second mode in which the first signal and the second signal are corrected by the temperature-characteristic correction circuit without the automatic correction circuit, and wherein the detection circuit is configured to allow the first mode and the second mode to be switchable.
 6. The rotation detecting device according to claim 5, wherein the detection circuit further includes: a temperature sensor that detects the temperature; and a memory that stores plural values of offset of the first signal, each of the plural values of the offset corresponding to respective one of plural values of temperature, and wherein the temperature-characteristic correction circuit adds, to the first signal, a value of offset among the stored plural values of offset corresponding to a value of the detected temperature.
 7. The rotation detecting device according to claim 5, wherein the detection circuit further includes: a temperature sensor that detects the temperature; and a memory that stores plural values related to offset of the differential signal, each of the plural values related to the offset corresponding to respective one of plural values of temperature, and wherein the temperature-characteristic correction circuit adds, to the first signal, a value related to the offset among the stored plural values related to the offset corresponding to a value of the detected temperature.
 8. The rotation detecting device according to claim 5, wherein the detection circuit further includes: a temperature sensor that detects the temperature; and a memory that stores plural values related to the amplitude of the first signal, each of the plural values related to the amplitude corresponding to respective one of plural values of temperature, and wherein the temperature-characteristic correction circuit adds, to the first signal, a value related to the amplitude among the stored plural values related to the amplitude corresponding to a value of the detected temperature.
 9. The rotation detecting device according to claim 5, wherein the detection circuit includes: a temperature sensor that detects the temperature; and a memory that stores plural values related to amplitude of the differential signal, each of the plural values related to the amplitude corresponding to respective one of plural values of temperature, and wherein the temperature-characteristic correction circuit adds, to the first signal, a value related to the amplitude among the stored plural values related to the amplitude corresponding to a value of the detected temperature.
 10. The rotation detecting device according to claim 1, wherein the first magnetic detection element and the second magnetic detection element contain magneto-resistive material.
 11. A rotation detecting device for detecting rotation of an object, the rotation detecting device comprising: a first magnetic detection element that outputs a first signal; a second magnetic detection element that outputs a second signal; and a detection circuit to which the first signal and the second signal are input, wherein the detection circuit includes: a temperature-characteristic correction circuit that corrects at least one of amplitude or offset of each of the first signal and the second signal according to temperature, and an automatic correction circuit that performs generating and updating a correction value for correcting the first signal and the second signal based on a differential signal that is a difference between the first signal and the second signal.
 12. The rotation detecting device according to claim 11, wherein the first signal is a sine wave signal, wherein the second signal is a sine wave signal, and wherein the detection circuit further includes an angle detection circuit that outputs an angle signal indicating an angle of the object based on the first signal and the second signal.
 13. The rotation detecting device according to claim 11, wherein the automatic correction circuit performs at least one of generating or updating of the correction value when the angle indicated by the angle signal is changed to 0° from 360° again after being changed to 0° from 360° or when the angle indicated by the angle signal is changed to 360° from 0° again after being changed to 360° from 0°.
 14. The rotation detecting device according to claim 11, wherein the first signal is a sine wave signal, and wherein the second signal is a sine wave signal.
 15. The rotation detecting device according to claim 11, wherein the automatic correction circuit does not operate when the temperature-characteristic correction circuit operates.
 16. The rotation detecting device according to claim 11, wherein the first magnetic detection element and the second magnetic detection element contain magneto-resistive material.
 17. A method of correcting a rotation detecting device, the method comprising: providing a rotation detecting device including a first magnetic detection element and a second magnetic detection element, the rotation detecting device being configured to detect rotation of an object; obtaining, according to the rotation of the object, a first signal and a second signal from the first magnetic detection element and the second magnetic detection element, respectively; generating and updating a correction value from a differential signal corresponding to a difference between the first signal and the second signal; detecting whether a rotation direction of the object is changed to a reverse rotation direction from a normal rotation direction or that the rotation direction of the object is changed to the normal rotation direction from the reverse rotation direction; and stopping generating and updating the correction value as a result of detecting that the rotation direction of the object is changed to the reverse rotation direction from the normal rotation direction or that the rotation direction of the object is changed to the normal rotation direction from the reverse rotation direction.
 18. The method according to claim 17, further comprising obtaining an angle signal indicating an angle of the object based on the first signal and the second signal, wherein the normal rotation direction is a direction in which the angle indicated by the angle signal is changed to 0° from 360°, and the reverse rotation direction is a direction in which the angle is changed to 360° from 0°.
 19. The method according to claim 17, wherein the first signal is a sine wave signal, and wherein the second signal is a sine wave signal.
 20. The method according to claim 17, wherein the first magnetic detection element and the second magnetic detection element contain magneto-resistive material.
 21. The rotation detecting device according to claim 3, wherein a phase of the first signal is shifted from a phase of the second signal by 90°. 